Proposal for an Easier Obtention of Piezoresistance Coefficients
DOI:
https://doi.org/10.24218/jatpr.2018.15Keywords:
Piezoresistance, Piezoresistance coefficients, Hydrostatic pressure. The piezoresistance effect consists on the change of electrical resistance as function of pressure. In particular, in the semiconductor industry, it has important applications in Micro Electro Mechanical Systems (MEMS), such as sensors, accelerometers and solid-state joysticks [1]. These MEMS devices base their functionality on the fact, that in the case for semiconductors, the change of the resistivity tensor in a crystal can be written as a tensor equation related to theAbstract
An alternative procedure to obtain the piezoresistance coefficients is proposed and implemented. It consists on the integration of the piezoresistance equation that relates the resistance change with the pressure change, via the piezoresistance coefficients. This yields a linear dependence between the logarithm of the measured resistance (R) and pressure (P). When implemented experimentally, this facilitates to make one single measurement of R vs P . The linear fit of the logarithm plot yields the piezoresistance coefficients. This technique is compared with the usual procedure, yielding smaller errors, while saving time and experimental and calculation effort, as only one measurement is necessary, as compared with the former procedure.Downloads
Published
2018-03-26
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Section
Short Communication